2 Technological aspects regarding thin-wafer processing Finally, in Section 5 progress in the thermal management of modules and discrete packages is described. Two recently proposed concepts, one improving the turn-off robustness, the other one enhancing the short-circuit capability, are illustrated in Section 4. Along with the reduction of power losses that enable the increase of power density, measures to increase the robustness of IGBTs are required. Further performance improvement can be obtained by using refined cell concepts such as the micro-pattern trench (MPT) IGBTs and advanced gate control concepts which are illuminated in Section 3. Here sophisticated field-stop (FS) concepts based on proton implantation, and substrate material issues enabling 300-mm production play a major role and are elucidated in Section 2. While for IGBTs with blocking voltages of 3 kV and higher, the final chip thickness is larger than 300 µm and conventional wafer processes can be applied for IGBT fabrication, the development of suitable thin-wafer processes was necessary for IGBTs with blocking voltages in the range of 400–1700 V, whose final chip thickness is smaller than 200 µm. V CEsat and switching losses, E on + E off, for Infineon's 1200 V IGBT generations IET Generation, Transmission & Distribution.IET Electrical Systems in Transportation.IET Cyber-Physical Systems: Theory & Applications.IET Collaborative Intelligent Manufacturing.CAAI Transactions on Intelligence Technology.
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